基于高压IGBT暂态机理模型的分析与研究

Analysis of transient mechanism model based on high voltage IGBT

随着绝缘栅双极性晶体管(IGBT)使用的电压等级越来越高,关于绝缘栅双极性晶体管(IGBT)开关暂态的研究显得尤为重要。在机理模型的基础上能细划分为MOSFET与BJT,即金属氧化层半导体场效晶体管与双极结型晶体管两个部分,对其进行建模,列举出模型参数提取方法。该模型可在Matlab中实现,把IGBT作为案例列出模型参数数值,分析比较高压开通暂态、关闭暂态与开关损耗仿真结果,以此检验机理模型对高压IGBT是否适用。

As the voltage grade is higher and higher,on insulated gate bipolar transistor（ IGBT） switch transient research is particularly important. On the basis of mechanism model can finely divided into MOSFET and BJT,namely metal oxide semiconductor field effect transistor and a bipolar junction transistor,the article lists out the model parameter extraction method. The model can be realized in Matlab. The IGBT as a numerical case listed model parameters,is analyzed and compared of high voltage opened transient,closed transient simulation results and the switching loss,to test whether the mechanism model of high voltage IGBT apply.