ZnSe/ Zn_(1-x)Cd_xSe非对称双量子阱中电子声子相互作用(英文)

Electron-Phonon Interaction in ZnSe/Zn_(1-x)Cd_xSe Asymmetric Double Quantum Well Structures

采用转移矩阵方法研究了 Zn Se/Zn1-x Cdx Se非对称双量子阱结构中界面光学 ( IO)声子模和电子 -IO声子相互作用哈密顿量 .发现 IO声子的色散关系和电子 -IO声子耦合强度是波矢的复杂函数 ,并且长波声子是主要的 .使用简化的相干势近似数值计算 Zn Se/Zn1-x Cdx Se非对称双量子阱结构 ,结果表明高频声子与 IO声子的相互作用较低频声子与

Interface optical (IO) phonon model, electron IO phonon (e IO p) interaction Hamiltonian are studied in ZnSe/Zn 1-x Cd x Se asymmetric double quantum well (ADQW) by using a transfer matrix method. It is found that the dispersion relations of IO phonons and the electron interface phonon coupling functions are complicated functions of wave vector and that the phonons with long wavelengths are important. The numerical computation has been done for ZnSe/Zn 1-x Cd x Se ADQW by using a simplified coherent potential approximation. The results show that the higher frequency modes are more important than the lower frequency modes for the e IO p interaction in the ZnSe/Zn 1-x Cd x Se system.