利用被钉扎层调控自旋阀的磁电阻值

Tuning MR of Spin Valve with Pinned Layer

利用高真空直流磁控溅射仪,在玻璃衬底上制备了结构为"Glass/Ta(6nm)/NiFe(6nm)/CoFe(1nm)/Cu(3nm)/CoFe(t nm)/IrMn(11nm)/Ta(6nm)"的自旋阀.研究了被钉扎层CoFe的厚度t对自旋阀磁性能的影响,当t为7.5nm时自旋阀主要性能达到最佳,并且在外加磁场4 000Oe下,270℃保温3h退火处理后,自旋阀的GMR值进一步达到5.5%,自由层矫顽力为3Oe,交换偏置场为130Oe.通过以上的优化方案,可以研制出高磁电阻率、低矫顽力和大交换偏置场的自旋阀.

The spin valve with Glass/Ta（6 nm）/NiFe（6 nm）/CoFe（1 nm）/Cu（3 nm）/CoFe（tnm）/IrMn （11 nm）/Ta（6 nm） was made on glass substrate by using high vacuum DC magnetron sputtering equipment. The influence of t （thickness of the pinned layer CoFe） on the magnetic properties of the spin valve was investigated and the performance of the valve was found to be optimum when t was 7.5 nm. After being annealed at 270℃ for 3 hours in a magnetic field with 5.5 %, the coer spin valve clvlty high reduced to 30e and the exchange bias MR,small coercivity and high exchange 4 000 Oe, field was 1 bias field the GMR of the valve increased to 30 Oe. By this optimal method,the can be obtained.