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改进垂直布里奇曼法生长硒化镓单晶(英文) 被引量:3

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal
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摘要 当生长ε相的硒化镓单晶时,组分挥发和固液界面震荡严重损坏晶体的结晶质量。利用改进垂直布里奇曼法生长出φ19mm×65mm硒化镓单晶。X射线粉末衍射仪(XRD)和傅立叶红外光谱仪(FT-IR)分别用于测量晶体的结晶度和光学性质。红外测试表明,硒化镓晶体透过波谱较宽(0.65-16μm)和吸收系数较低(〈0.3cm-1)。 As growing e-GaSe single crystal, volatile component and curving solidification interface spoil the qualities of crystals. The GaSe single crystal in φ19mm×65mm size was grown by modified vertical Bridgman method. The crystallinity and optical properties of as-grown crystals were measured by XRD and transmission spectra, respectively. The FT-IR measurements indicated wide transparency over the spectral range (0.65-16 μm) and low absorption coefficient (〈0.3 cm-1) in grown GaSe crystal.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2014年第5期557-560,共4页 Journal of Inorganic Materials
基金 National Natural Science Foundation of China(51202250) Knowledge Innovation Program of the Chinese Academy of Sciences(13J131211)
关键词 布里奇曼技术 非线性光学晶体 固化界面 Bridgman technique nonlinear optical crystal solidification interface
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参考文献13

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