摘要
IGBT模块作为重要的高频大功率开关元器件,频繁的热循环导致其层状模块结构钎焊焊层内产生热应力,使得焊层开裂脱落,进而引起IGBT模块芯片温度过高失效。颗粒增强相金属基复合材料(SiCP/Al)基板由于其较高的热导率和与IGBT封装材料相匹配的热膨胀系数,能解决IGBT模块这一主要失效难题。采用预制块压力渗透法制备铝基碳化硅基板:将SiC颗粒进行表面金属化预处理,熔融铝液在700℃下保温30 min,预热模具温度设定600℃。压力渗透后脱模成型的铝基碳化硅基板,其热导率与热膨胀系数测试值均符合基板材料的性能要求。
As an important switch components with high power--IGBT module, the thermal stress caused by frequent thermal cycling can result in the crack of welding layer （brazing filler metal）, which make IGBT chip fail because of module high temperature. SiC/AI can fully solve the IGBT module＇s main failure problem, for which has high thermal conductivity and has thermal expansion coefficient matching to IGBT encapsulation material. SiCp/Al basalia is produced by precast block pressure infiltration： pretreating silicon carbide particle with surface metallization, molten aluminum stays at 700 ℃ for 30 min, the mold＇s temperature preheats at 600℃. The thermal expansion coefficient and thermal conductivity test are in line with the requirements of IGBT basalia material＇s properties.
出处
《热加工工艺》
CSCD
北大核心
2014年第10期121-124,共4页
Hot Working Technology
