脉冲激光沉积纳米Si晶粒气相生长的蒙特卡罗模拟

Monte Carlo simulation of vapor phase growth of nanoparticles by pulsed-laser deposition

采用蒙特卡罗(Monte Carlo)模拟方法,引入粘连成核模型,模拟了脉冲激光烧蚀制备纳米Si晶粒的气相成核与长大过程,并研究了初始烧蚀Si粒子总数对纳米晶粒尺寸和密度分布的影响.研究结果表明:随着初始烧蚀Si粒子总数增大,纳米晶粒数目增多,尺寸分布变宽,Si晶粒尺寸分布近似满足幂函数衰减规律.给出了烧蚀粒子和环境气体密度随时间演化图,所得结论可为进一步研究纳米晶粒生长动力学提供理论依据.

Based on combinational nucleation model, the vapor phase nucleation and growth of the nan- oparticles formed by plused-laser ablation is simulated using Monte Carlo simulation method. The influ- ence of the total number of the initial ablated Si particles on the size and density distribution of the nanop- articles is investigated. The results show that with the increase of the total number of the initial ablated Si particles the number of the Si nanoparticles are increased and the size distribution range are widened. The size distributions of the nanoparticles are appropriately to power function. The time evolution of the densi- ties of the ablated Si particles and the ambient gas are gained. The conclusion is the base for further inves- tigating into the growth dynamics of the Si nanoparticles.