电子束蒸发沉积制备碳化硼薄膜的化学结构研究

Researchon Chemical Structure of Boron Carbide Thin Films Deposited by Electron Beam Evaporation

采用了电子束蒸发在Si(100)片沉积了碳化硼(B4C)薄膜,并用傅里叶变换衰减全反射红外光谱(ATR-FTIR)和X射线光电子能谱(XPS)对薄膜样品组分和结构进行分析,以研究在不同基片温度和束流下对薄膜结构的影响.分析表明:薄膜中均含有1170cm-1,1660cm-1两个特征峰,分别对应于碳化硼中正二十面体和三原子链的结构.不同基片温度对薄膜化学结构无影响;而不同束流,形成的结构不同,主要体现在碳化硼的特征结构(三原子链和正二十面体)的形成,随着束流的增大,薄膜中二十面体结构显著增多,B的流失减少.

Boron carbide films were deposited on Si（100） by means of electron beam evaporation of a bo- ron carbide target in vacuum and their structures at different substrate temperatures and currents were studied by using Attenuated Total internal Reflectance Fourier Transform Infrared spectroscopy （ATR- FTIR） and X-Ray Photoelectron Spectrometer（XPS）. The results show that all films contain two characteristic peaks at llT0cm-1 and 1660cm-1 , which correspond to the 12-atom icosahedra and 3-atom linear chain of boron carbide, respectively. The substrate temperature has no effect on films~ structures; however, the current can influence the structures. That is to say, the 12-atom icosahedra of boron car- bide increase significantly and the wastage of B decreases with the increase of current.