ICP仪器中大功率射频固态功率放大板的设计

A High Power RF Solid-State Power Amplifier for ICP

本研究提出了一种在电感耦合等离子体(ICP)质谱/光谱仪中,安装在离子源光炬前端,单板最高功率可达2 000W的射频功率放大板的设计制作方法。该放大板采用最新射频横向扩散金属氧化物半导体(LDMOS)管Freescale MRFE6VP61K25H为末级放大器。MRFE6VP61K25H单管放大能力可达1 250W,改进后单板通过2个LDMOS管组成推挽并行式的E类放大器,可轻松达到ICP光源要求的1 600W设计功率。该放大器的成品体积为所用装备的25%,制造成本也仅为目前同类产品的50%,达到了体积小、造价低、功率大的设计效果。此设计可为进一步研制便携式ICP质谱/光谱仪等提供良好的硬件基础。

A design and manufacturing method of power amplifier which installed in front of ICP-MS/ICP-AES＇s ICP light torch was presented. The amplifier board was used the latest RF I.DMOS transistor MRFE6VP61K25H as the final step amplifier. A single MRFE6VP61K25H LDMOS transistor supply maximum 1 250 W RF power, so this amplifier moudle which peak power can reach 2 000 W, can meet the ICP light torch＇s power requirement（1 600 W）easily through two LDMOS constitute a parallel push-pull class E amplifier. The volume of power amplifier module is reduced to 25% of the design before, and the module cost is only 50 % of current similar products. This design provides a good hardware basis for the further development of portable ICP-MS and ICP-AES, etc.