摘要
Abstract： The undoped and Yb-doped HfO2 thin films were deposited on p-type single crystal St（100） substrates using RF magnetron sputtering method. The structure and electrical properties were investigated as a function of doping concentrations. The results showed that the presence of Yb could stabilize HfO2 in cubic phase. The dielectric constant was enhanced after in- troducing Yb3＋ ions into the HfO2 host. Compared with undoped HfO2 thin film, the Yb-doped l-IfO2 thin film exhibited a low leakage current. The silicate reaction between rare earth ions and SiO2 layers was used to eliminate interfacial silica and form a stable interface.
Abstract： The undoped and Yb-doped HfO2 thin films were deposited on p-type single crystal St（100） substrates using RF magnetron sputtering method. The structure and electrical properties were investigated as a function of doping concentrations. The results showed that the presence of Yb could stabilize HfO2 in cubic phase. The dielectric constant was enhanced after in- troducing Yb3＋ ions into the HfO2 host. Compared with undoped HfO2 thin film, the Yb-doped l-IfO2 thin film exhibited a low leakage current. The silicate reaction between rare earth ions and SiO2 layers was used to eliminate interfacial silica and form a stable interface.
基金
Project supported by the National 111 Project(B08040)
National Natural Science Foundation of China(51172186,61376091)
the Natural Science Foundation of Shaanxi province(2012JM6012)
