Efficiency Improvement of 590 nm AIGalnP Light Emitting Diode with a Reflective Top Electrode
Efficiency Improvement of 590 nm AIGalnP Light Emitting Diode with a Reflective Top Electrode
摘要
In this work, enhancement of the light extraction efficiency of a 590 nm AIGaInP light-emitting diodes （LED） with a reflective top electrode （RTE） was investigated. A distributed Bragg reflector （DBR）, consisting of AIAs/AIGaAs pairs, grown on an AlGaInP structure was used as a reflector for a reflective top electrode. It was found that a higher output power was observed from the AIGalnP LED with a RTE than from a conventional one. In addition, it was noted that the improvement in the output power depends strongly on the reflectivity of the reflector and that it exhibits a more effective performance with low injection currents. The increase in the optical output power was attributed to the enhanced extraction efficiency caused by a reduction of light absorbed from the emission region to top electrode through the RTE.
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