摘要
提出了一种双外延高能离子注入的单片集成有源像素探测器的传感器结构,以提升传感器对电荷的收集性能和辐射加固,并进行了三维工艺模拟和物理级器件仿真计算.研究结果表明,所提出的传感器结构改善了内部电场和电势的分布,且目标电极的电荷收集效率提高70%,电荷收集时间减少64%.此外,当等效中子辐射流通量在1012—1015cm-2范围内时,所提出的传感器结构比标准传感器结构有更高的电荷收集能力.
In this paper, a double epitaxial and high energy implant (DEI) is proposed to improve the performance of charge collection and radiation hardness. Three-dimensional process procedure and physical level simulation are presented. The results show that the internal distributions of electric potential and electric field are improved; the seed point pixel coUected charge increases about 70% and reduces the collected time to 64%. In addition, the DEI structure increases the collecting efficiency in a radiation range from 10^12 to 10^15 cm^-2as compared with the standard monolithic active pixel sensors.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2014年第10期72-78,共7页
Acta Physica Sinica
基金
教育部科学技术研究重大项目(批准号:313017)
高等学校博士学科点专项科研基金(批准号:20122304110016)
中央高等学校基本科研业务费(批准号:HEUCF130818
HEUCF140814)资助的课题~~