原子光刻制备铬原子纳米条纹的实验研究

Depositing chromium nano lines by atom lithography

原子光刻技术可以制备高重复性的铬原子纳米条纹光栅,这种光栅可以作为纳米节距标准,实现对高精度的扫描探针式显微镜、电子显微镜等高端仪器的校准。高真空腔体中的固态铬原子受高温喷发出气态原子束,运动的原子束在冷却激光场和激光驻波场的分别作用下,实现原子束的准直与汇聚,沉积在位于激光驻波场后面的InP基片上。经过3h的堆积,得到间距为212.78nm,高度为9nm的铬原子纳米条纹光栅。针对条纹生长速率较慢的问题,分析了具体原因,为后续工作提供参考。

Chromium nanometer grating can be repetitively fabricated by atom lithography, this nanometer grating can be used as a nano pitch standard to realize the calibration of high precise measurement equipments, such as scanning probe microscopy, scanning electronic microscopy. In the high vacuum apparatus, chromium atoms evaporated from a high temperature effusion cell, and the propagating atoms interacted with the cooling light and standing light wave respectively, so they were collimated, focused and deposited on the InP substrate which located behind of the standing light wave. During 3 h depositing, a nanometer grating with space distance of 212.78 nm, corresponding to the laser wave length, and height of 9 nm was obtained. Considering the low growing speed of nanometer lines, the possible reasons were analyzed and the solutions would be applied in the following experiments.