高温垂直Bridgman法生长Zn_(1-x)Mg_xTe晶体

Growth of Zn_(1- x)Mg_xTe Crystal by High Temperature Vertical Bridgman Method

采用高温垂直Bridgman法,以ZnTe(5N)、Mg(5N)和Te(7N)为初始原料,在高温下成功生长出了尺寸为15mm×50 mm的Zn1-xMgxTe晶体。分别采用X射线衍射、紫外可见分光光度计和红外光谱仪研究了晶体的结构及光学性质,通过PL谱和化学腐蚀的方法分析了晶体的结晶质量。结果表明:所生长的晶体具有立方相结构,晶格常数为0.61585 nm,略大于ZnTe晶格常数,晶锭中质量最好部分的晶片红外和紫外透过率接近60%,室温下其禁带宽度约为2.37 eV。77 K温度下,PL谱中存在A和B两个主要的发光带,位错腐蚀坑密度在105cm-2数量级。

Using ZnTe（5N）,Mg（5N） and Te（7N） as starting materials,Zn1- xMgxTe crystal with a size of 15 mm × 50 mm was successfully grown through high temperature Bridgman method. The crystal structure and optical properties of the crystals were characterized by XRD, UV-VIS and infrared spectrophotometer. The quality of the crystal was studied by PL and chemical etching. The results show that the obtained crystal has a cubic structure and its lattice constant is 0. 61585 nm,which is slight larger than that of ZnTe. The IR and UV transmittance of the wafer in the best part of ingot nearly reach 60% and its bandgap is about 2. 37 eV at room temperature. Two main emission bands A and B were detected in photoluminescence spectra at 77 K. The etch pits density（EPD） is about 105cm- 2.