含Ag电极的非晶In-Ga-Zn-O薄膜的阻变开关特性

Investigation on Resistive Switching Characteristics of Amorphous In-Ga-Zn-O Thin Films with Ag Electrode

采用射频磁控溅射法在Pt/Ti/SiO2/Si衬底上制备了非晶InGaZnO4(α-IGZO)薄膜,利用直流磁控溅射法制备的Ag金属薄膜作为反应上电极,构建了Ag/非晶InGaZnO4(α-IGZO)/Pt结构的阻变存储器件单元。所制备的器件具有双极型阻变特性,写入时间仅为107 ns,经过300次循环开关后,器件仍显示良好的开关效应。对置于高低阻态的器件使用5 mV横电压测量其电阻,电阻值经过1.2×104s无明显衰减趋势,表明器件具有较好的保持特性。阻变开关机制归因于在外加电场的作用下,由于电化学反应,使得Ag导电细丝在存储介质α-IGZO薄膜中形成和溶解。

Amorphous-InGaZnO4（α-IGZO） thin films were deposited on Pt/Ti/SiO2/ Si substrate using RF magnetron sputtering technique,and Ag metal film was grown as reactive electrode by DC magnetron sputtering technique,then Ag / amorphous-InGaZnO4（α-IGZO） /Pt heterojunction was constructed as resistive switching memory cell. The cell has bipolar resistive switching characteristic. The written time of the cell is only 107 ns,and after repeating more than 300 times,it exhibits good resistive switching window effect. The cell at HRS and LRS can maintain more than 1. 2 × 104s under a small voltage 5 mV, which implies that the cell has good retention. It is analyzed that resistive switching mechanism was attributed to the electrochemical reaction,which resulted in formation and dissolution of the metallic Ag nanofilaments in α-IGZO thin film under the applied electric field.