钛掺杂对ZnO∶Ti透明导电薄膜性能的影响

Effect of Ti Doping on the Properties of ZnO∶Ti Transparent Conducting Thin Films

以不同钛掺杂含量的氧化锌陶瓷靶作为溅射源材料,采用射频磁控溅射工艺在玻璃基片上沉积了Ti掺ZnO(TZO)透明导电薄膜,通过XRD、XPS、分光光度计和霍尔效应测试系统,研究了钛掺杂含量对TZO薄膜微观结构和光电特性的影响。结果表明:所有TZO薄膜均为六角纤锌矿结构,并且具有(002)择优取向,钛掺杂含量对薄膜性能具有明显的影响。当钛掺杂含量为3wt%时,TZO薄膜的结晶质量最好、可见光平均透过率最高、电阻率最低、品质因数最大(748.15 S/cm),具有最佳的光电综合性能。TZO薄膜的光学带隙随钛掺杂含量增加而单调增大。

Ti-doped ZnO（TZO） transparent conducting thin films were deposited by radio-frequency magnetron sputtering method using ZnO ceramic target as sputtering source material. The influence of Ti doping content on the microstructure,optical and electrical properties of the films were investigated by XRD, XPS,spectrophotometer and Hall measurement system. The results show that the deposited films with a hexagonal wurtzite structure and grow preferentially in the（002） direction. The titanium content significantly affects the microstructure and optoelectrical characteristics of the thin films. The TZO sample prepared with titanium content of 3wt% possesses the highest optoelectrical performance,which have the best crystalline quality,the lowest electrical resistivity,the highest average visible transmittance and the maximum figure of merit（748. 15 S / cm）. Furthermore,the optical bandgaps of the thin films were calculated using Tauc ’s relation. A blue shift of the optical bandgap was observed as the titanium content increasing.