溅射功率对脉冲磁控溅射沉积Cu2O薄膜结构和光学性能的影响

Effects of Sputtering Power on Structure and Optical Properties of Cu_2O Thin Films Deposited by Pulse Magnetron Sputtering

利用脉冲磁控溅射制备技术,采用单质金属铜靶作为溅射靶,在氧气（O2）和氩气（Ar）的混合气氛下,在石英玻璃衬底上制备了Cu2O薄膜。研究了溅射功率对脉冲反应磁控溅射沉积法在室温下对生长Cu2O薄膜结构、表面形貌及光学性能的影响。结果表明,在O2、Ar流量比（O2/Ar）为30∶80的气氛条件下,在60~90 W的溅射功率范围内可获得〈111〉取向的Cu2O薄膜;薄膜的表面粗糙度的均方根值随溅射功率的增加而增大;薄膜的光谱吸收范围为300~670 nm,不同溅射功率下制备的薄膜均在430 nm附近出现明显的带边吸收,其光学带隙（Eg）在2.15~2.53 eV之间变化。

Cu2O thin films were prepared on quartz glass substrates by pulse magnetron sputtering using a metallic copper target in Ar and O2mixture atmosphere. The effects of sputtering power on crystalline structure,surface morphology and optical properties of Cu2O thin films were investigated at different sputtering powers. The results show that at an O2/ Ar flow ratio of 30∶ 80,the thin films deposited at room temperature were single-phase Cu2O（111） for 60-90 W sputtering power. The surfaces morphologise of Cu2O thin films depended on the sputtering powers,root mean square values of roughness of the thin films increases as the sputtering powers increasing. Moreover,in the wavelength range of 300-670 nm,the optical band gap（Eg） valus of thin films deposited at different sputtering powers range from 2.15 eV to 2.53 eV.