高品质ZnGeP_2晶体光参量振荡元件及应用

Optical Parametric Oscillation Devices and Applications of High Quality ZnGeP_2 Crystals

在高纯ZnGeP2多晶批量合成基础上,采用垂直布里奇曼法生长出尺寸（40~50）mm×140 mm的高品质单晶。切割出多种6 mm×6 mm×（16~30）mm规格的晶体元件,元件o偏振光2.05μm吸收系数为0.01~0.03cm-1,通过光参量振荡技术实现中波（3~5μm）40 W和远波（8~10μm）3 W的激光输出。

Based on masses of high-purity ZnGeP2polycrystalline materials synthesized in one run,and high-optical quality single crystals with dimensions of （40-50） mm × 140 mm were grown by Vertical Bridgman technique. More than one devices were fabricated along phase-matching directions with the typically dimension of 6 mm × 6 mm ×（16-30） mm from the large single crystals. The absorption coefficient of the devices under o-polarized 2. 05 μm light was about 0. 01-0. 03 cm-1. Through the optical parametric oscillation these devices realized high-power mid-infrared waveband（3-5 μm） and farinfrared waveband（8-10 μm） output 40 W and 3 W,respectively.