QLED用空穴传输层WO_3的形貌调控和光电性能研究

Morphological Control and Photoelectric Performance of Hole Transport Layer WO_3 for QLED

采用溶剂热法在FTO导电玻璃上制备WO3薄膜,通过改变溶剂和添加剂的种类,调控WO3的微观形貌、光学性质和电学性质,以期作为空穴传输材料应用在QLED器件中。利用XRD、FE-SEM、紫外可见分光透射光谱、霍尔测试等方法分析表征样品。实验结果表明,通过溶剂热法成功制备了不同形貌的WO3薄膜,其光学透过率高,载流子传输速率得到明显提高,有望应用在QLED器件中进而提高QLED的器件效率。其中,采用水作为溶剂,并添加2 mL乙腈和0.07 g尿素的溶剂热条件制备的WO3薄膜其载流子传输速率最高为2.678×102cm2·Vs-1,导电性能最高,电阻率为5.334×10-2Ω·cm。

Thin films of WO3 were grown directly on FTO-coated glass substrate, s using the solvothermal method. Thin films of WO3 were characterized by XRD, FE-SEM, UV-Vis transmittance spectrum and Hall Test. Thin WO3 films have different vertical microstructures of nanoplates by changing solvothermal solvents and addition. Hall test shows that all WO3 films are p-type semiconductor. As compared to magnetron-sputtering WO3 films, the hole motilities of solvothermal WO3 films increase several orders of magnitude. The WO3 film synthesized with addition of 2 mL acetonitrile and 13.07 g urea shows best carrier mobility （2. 678 × 10^2 cm^2 ·Vs- 1 ） and electric conductivity （electrical ：resistivity： 5. 334× 10^-2 Ω· cm）.