SOI基上制备CuO纳米线

Preparation of CuO nanowires on SOI substrate

在SOI基上制备光电纳米器件具有良好的光电集成应用前景,通过铜膜生长法在 SOI 基上制备了形貌为类针状的 Cu（OH）2前驱体纳米线,并采用热处理法600℃条件下成功制备了 CuO 纳米线。通过扫描电镜（SEM）、透射电镜（TEM）、X 射线衍射测试（XRD）对样品结构、形貌进行了表征。 SEM、TEM测试结果表明,Cu（OH）2前驱体纳米线结构一致,尺寸均匀,表面光滑。在 Cu（OH）2前驱体纳米线上二次生长的CuO 纳米线具有类蒲草状细长光滑的结构, CuO纳米线直径约为80-100 nm,长度约为10μm, CuO 纳米线结晶性良好。

Preparation of optoelectronic nanodevices on SOI substrate has good prospects in optoelectronic inte-grated applications.CuO nanowires have been successfully prepared on the SOI substrate at 600 ℃ by the heat treatment method of Cu（OH）2 precursors nanowires,which were pre-prepared by the copper film growth meth-od.Morphology and structures of the samples were characterized by scanning electron microscope （SEM）, transmission electron microscopy （TEM）,and X-ray diffraction （XRD）.The SEM and TEM testing results showed that Cu（OH）2 precursors nanowires were needle-like with consistent structure and smooth and uniform surface.The CuO nanowires were cattail-like with tenuous and smooth structure.The diameter of CuO nanowires was about 80-100 nm,the length of nanowires was about 10μm.A good crystalline quality of CuO nanowires were obtained.