大功率IGBT栅极驱动电路的研究

Research of High-power IGBT Gate Drive Circuit

在大功率IGBT应用系统中,脉冲变压器隔离的栅极驱动电路由于能得到相对较高的隔离电压,可实现较高开关频率等优点,被广泛应用。在高压大电流IGBT特性分析的基础上,从实践出发对IGBT驱动电路的影响因素做了深入的研究,并探讨了IGBT栅极驱动电路设计注意的几个问题。对很有实际应用价值的脉冲变压器隔离的IGBT栅极驱动电路及其相应芯片进行了分析研究。由此可以更深刻地理解IGBT的驱动电路及其影响因素,这对正确使用IGBT器件及其驱动电路的设计有一定的实用价值。

In high-power IGBT application system,the gate drive circuit for pulse transformer isolation finds a wide range of application as it can obtain relatively high isolation voltage and high switch frequency. On the basis of analysis on the characteristics of the high-voltage large-current IGBT,this paper makes an in-depth study on the factors influencing IGBT drive circuit and explores some issues in its design from the perspective of practical application. IGBT grate drive circuit of the pulse transformer isolation with a high value of practical application and its corresponding chip are analyzed to enable a more profound understanding of the IGBT drive circuit and its influence factors. It is of a certain practical value for proper use of IGBT devices and their drive circuit.