垂直碳纳米管阵列的生长控制研究进展

Advances in growth control of vertically-aligned carbon nanotube forests

垂直碳纳米管(VACNT)阵列由于具有良好的排列、优异的导电导热能力、高比表面积、高纯度等优点而得到广泛应用。本文概述了用于碳纳米管阵列生长的热化学气相沉积(CVD)制备方法的最新进展,重点阐述了CVD法生长碳纳米管阵列的动力学与生长终止机理,指出CVD过程中的催化剂形貌演化是引发碳纳米管阵列生长停止的重要原因。介绍了人们通过生长条件控制与催化剂设计等方法调控碳纳米管阵列结构(包括管壁数、管径和密度)方面取得的进展,指出碳纳米管阵列的大批量制备及结构参数的精确调控是未来发展的重点。

Due to good alignment,excellent electrical and thermal conductivity,high surface area, and high carbon purity,vertically-aligned carbon nanotube （VACNT） forests have shown to be advantageous for numerous applications. This paper summarizes recent advances in several chemical vapor deposition （CVD） methods for synthesizing VACNT forests. It focuses on kinetics and termination mechanism of VACNT forest growth by the CVD technique,and catalyst morphology evolution was designated to be the main reason for termination of CNT forest growth. In addition,the progress in structure tailoring of VACNTs （including wall number,diameter and density） through condition control and catalyst designing are also introduced. And,massive growth of VACNT forests and precise control of their structure are regarded as important points to be further studied in the future.