纳米银焊膏双面连接IGBT封装形式的强度

STRENGTH AND RELIABILITY OF NANOSILVER PASTE BONDING DOUBLE-SIDED PACKAGED IGBT ASSEMBLIES

采用无铅化电子封装用芯片连接材料—纳米银焊膏,成功制备了IGBT双面连接试样。芯片剪切实验表明双面连接试样中纳米银烧结焊点的平均剪切强度可达约22 MPa。通过加入银缓冲层后,试样平均剪切强度达到27.5MPa。-40℃^+150℃的热循环老化实验表明,添加银缓冲层的双面连接IGBT试样热循环可靠性更高。

Double-sided IGBT assemblies bonded by sintered nanosilver were fabricated in this study. Die-shear tests revealed that the bonding strength of the assemblies between chip and substrate was about 22 MPa. Furthermore, by adding silver buffer, the average bonding strength of assemblies rose to 27.5 MPa. Temperature cycling test （-40℃～＋150℃ ） showed that the double-sided IGBT assembly with silver buffer was more reliable.