化学气相沉积法制备GaN纳米线及其形貌结构和生长机理研究

The investigation of the morphology,crystal structure and growth mechanism of GaN nanowires synthesized by CVD

采用化学气相沉积(CVD)法,分别以Ni、Au为催化剂,氨化金属Ga制备出GaN纳米线。运用SEM,EDX,TEM等表征手段分析了GaN纳米线的形貌与结构。通过改变氨化温度、生长时间、催化剂、衬底以及Ga源和衬底间的距离等生长条件,研究了其对GaN纳米线形貌和结构的影响,通过分析探讨纳米线的生长过程与机制,得到了生长GaN纳米线的最佳工艺。

One-dimensional GaN nanowires were synthesized via chemical-vapor-deposition method with Ni and Au as catalysts by ammoniating metal Ga.SEM,TEM and XRD were used to characterize the morphology and the microstructure of the GaN nanowires samples.By changing the key factors such as the growth temperature and time,the different kinds of catalysts,the distance between the Ga and wafers,different morphology and structures of GaN nanowires were analyzed.It was demonstrated that the VLS mode and VS mode were coexis-ted in GaN nanowires growth process.Finally,the optimum growth conditions for GaN nanowires were ob-tained.