摘要
A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.
A broadband monolithic linear single pole, eight throw （SP8T） switch has been fabricated in 180 nm thin film silicon-on-insulator （SOI） CMOS technology with a quad-band GSM harmonic filter in integrated passive devices （IPD） technology, which is developed for cellular applications. The antenna switch module （ASM） features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.
