摘要
Single variable and deposition weight methods were adopted in the experiment. The hafnium crystal bar was fabricated by the iodide process. Influence of hafnium filament temperature(K value), temperature controlling method, types of feed, and the loading methods on the deposition rate were studied. The results show that the K value, temperature control method, types of feed, and the loading methods have obvious effects on the deposition rate of the hafnium crystal bar. The deposition rate increases with the K value rising in the range of certain temperature;the salt bath controlling temperature method could effectively obtain the better deposition rate; the greater the contact areas of the feeds are, the faster the deposition rate is.So, the optimal iodide deposition techniques of preparing hafnium crystal bar are as follows: hafnium turnings as feed,molybdenum feed retainer charging, salt bath temperature controlling under the higher K value.
Single variable and deposition weight methods were adopted in the experiment. The hafnium crystal bar was fabricated by the iodide process. Influence of hafnium filament temperature(K value), temperature controlling method, types of feed, and the loading methods on the deposition rate were studied. The results show that the K value, temperature control method, types of feed, and the loading methods have obvious effects on the deposition rate of the hafnium crystal bar. The deposition rate increases with the K value rising in the range of certain temperature;the salt bath controlling temperature method could effectively obtain the better deposition rate; the greater the contact areas of the feeds are, the faster the deposition rate is.So, the optimal iodide deposition techniques of preparing hafnium crystal bar are as follows: hafnium turnings as feed,molybdenum feed retainer charging, salt bath temperature controlling under the higher K value.
基金
financially supported by the National Technology Support Project of China (No. 2012BAB10B10)
China–Russia Corporation Program, Ministry of Science (No.2010DFR50800)