Cu薄膜生长过程的Monte Carlo模拟

Monte Carlo Simulation of Cu Thin Films Growth Process

用动力学晶格蒙特卡洛模型(Kinetic Lattice Monte Carlo,KLMC)模拟Cu薄膜的生长过程,讨论了基底温度、沉积原子数、单原子最大迁移步数和原子相互作用范围等参数对薄膜表面形貌的影响,并与实验结果进行了比较。结果表明:基底温度升高或沉积原子数增加时,沉积在基底上的原子逐步由众多各自独立的离散型分布向聚集状态过渡形成团簇,并且温度越低,团簇越趋于分散生长。当最大迁移步数减小或相互作用范围增大时,团簇亦趋于分散生长。

The Cu thin films growth process was simulated by using Kinetic Lattice Monte Carlo （KLMC） models. The effects of substrate temperature, number of atoms deposited, maximum migration step of atoms, and interaction range of atoms on the thin film surface morphology were discussed. Meanwhile, they are compared with the experimental results derived from the analysis of magnetron sputtering Cu thin films. The results show that as the suhstrate temperature or the number of atoms deposited increases, atoms deposited on the substrate are changed from numerous independent discrete distributions to the state of aggregation gradually and then transition into clusters. In addition, the lower the temperature, the more clusters tend to be dispersing growth. Also, when the maximum migration step of atoms decreases or the interaction range of atoms increases, the clusters have a disperse growth tendency.