内含C_(60)掺杂空穴传输层的量子点电致发光器件

Quantum-Dot Electroluminescence Devices with C_(60)-Doped Hole Transport Layer

聚乙烯咔唑(PVK)中掺入富勒烯(C60)的重量比从0%到10%变化,以研究在空穴传输层中掺杂C60后对量子点电致发光器件性能的影响。掺入C60后的PVK薄膜在氧化铟锡(ITO)基底上均方根粗糙度从3 nm降至1.6 nm。另外,掺入C60后有利于空穴的注入和传输,改善器件中电子和空穴的平衡,提高了器件的效率。

The effect of fullerene （C60） doping in poly （9-vinylcarbazole） （PVK） on the electroluminescent （EL）properties of quantum dot light-emitting devices was investigated by changing the C60 content from 0wt％ to 10wt％.The surface roughness of pure PVK film on ITO substrate was 3 nm,while that of C60 doped PVK film was only 1.6 nm.The doping of C60 in PVK could result in efficient hole injection and transport,and thus the balance of charge carriers and the EL efficiency were improved.