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基于ADS的LDMOS功率放大器设计与仿真 被引量:5

Design and simulation of LDMOS power amplifier based on ADS
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摘要 基于ADS(advanced design system)仿真平台,采用谐波平衡法设计LDMOS(laterally diffused metal oxide semiconductor)射频功率放大器.选择飞思卡尔公司的功率管MW6S004N,采用负载牵引和源牵引技术实现输入和输出端口的阻抗匹配,并采用电路原理图与版图协同仿真技术完成了放大器的设计.结果表明:基于负载牵引和源牵引的阻抗匹配技术可减小调试成本、缩短设计周期;采用谐波平衡法可加快仿真的速度,采用协同仿真方法可提高仿真结果的准确性. Based on advanced design system (ADS) simulation software platform, by harmonic balance theory, laterally diffused metal oxide semiconductor(LDMOS) microwave power amplifier was designed. In order to achieve the impedance matching of the input and output ports, the load-pull and source-pull technology were employed by selecting the power transistor MW6S004N of Freescale company, and schematic-layout co-simulation method was used to achieve the power amplifier design. It showed that the load-pull and source-pull impedance matching techniques could reduce the cost and design cycle, the harmonic balance method could accelerate the simulation speed, and the cosimulation method could improve the accuracy of the simulation results.
出处 《湖北大学学报(自然科学版)》 CAS 2014年第4期317-322,328,共7页 Journal of Hubei University:Natural Science
关键词 LDMOS射频功率放大器 负载牵引 协同仿真 谐波平衡 ADS LDMOS RF power amplifier load-pull co-simulation harmonic balance advanceddesign system
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参考文献9

  • 1Atanaskovic A, Males Ilic N, Milovanovic B. Linearization of power amplifier by second harmonics and forth order nonlinear signals[J]. Microwave and Optical Technology Letters, 2013,55:425-430.
  • 2Mark P, Gajadharsing John R, Burghartz Joachim N. Theory and design of an ultra linear square-law approximated LDMOS power amplifier in class-AB operation[J]. IEEE Transaction on Microwave Theory and Techniques, 2002, 50(9) :2176-2184.
  • 3Song Ki Jae, Lee Jong-Chul, Lee Byungje, et al. High-efficiency class-C power amplifier[J]. Microwave and Optical Technology Letters, 2004,40 : 164-167.
  • 4Mury Thian, Vincent Fusco. Design strategies for dual-band class-E power amplifier using composite right/left-handed transmission lines[J]. Microwave and Optical Technology Letters, 2007,49 : 2784-2788.
  • 5Li Mingyu, He Songbai, Li Xiaodong. Complex radial basis function networks trained by QR Decomposition recursive least square algorithms applied in behavioral modeling of nonlinear power amplifiers[EB/OL]. 2009. http://www, interscience. wiley, com.
  • 6Bengtsson O, Vestling L, Olsson J. Investigation of SOI-LDMOS for RF Power applications using computational load pull[J]. IEEE Transaction on Electron Devices, 2009,56: 505-511.
  • 7鲍景富,郭伟,李源.WCDMA线性功率放大器设计[J].电子科技大学学报,2008,37(1):1-3. 被引量:6
  • 8郭潇菲,刘凤莲,王传敏.微波功率晶体管放大器匹配电路的设计[J].微波学报,2009,25(5):67-69. 被引量:4
  • 9南敬昌,梁立明,刘影.基于ADS微波功率放大器设计与仿真[J].计算机仿真,2010,27(5):327-330. 被引量:5

二级参考文献20

  • 1杨贤松.用ADS进行宽带微波功放的仿真设计[J].通信对抗,2006(1):55-57. 被引量:9
  • 2蒋拥军,潘厚忠.S波段超宽带固态功率放大器的研制[J].微波学报,2005,21(B04):101-103. 被引量:10
  • 3郑新,李文辉,潘厚忠等编.雷达发射机技术[M].北京:电子工业出版社,2008.127-148.
  • 4Agilent technologies. Advanced Design System Documentation[OL], www. Agilent. corn, 2003.
  • 5Stephen A Maas. Nonlinear Microwave and RF circuits. Artech House,2003.
  • 6Rowan Gilmore, Les Besser. Practical RF Circuit Design for Modem Wireless Systems, volume Ⅱ, Active Circuits and Systems[ M]. London. Arteeh House, 2003.
  • 7Steve C Cripps. RF power amplifiers for wireless comunications [M]. Artech House, 1999.
  • 8R Ludwig, P Bretchko. RF Circuit Design: Theory and Applications[M]. Englewood. Prentice-Hall, Inc, 2000.
  • 9Ulrich L Rohde, David P Newkirk. RF Microwave circuit design for wireless applications[ M]. John Wiley & Sons, Inc. 2000.
  • 10Andrei Grebennikov. RF and microwave power amplifier design [ M ]. McGraw - Hill Companies, 2005.

共引文献10

同被引文献39

  • 1张光义,王炳如.对有源相控阵雷达的一些新要求与宽禁带半导体器件的应用[J].现代雷达,2005,27(2):1-4. 被引量:24
  • 2应子罡,吕昕,高本庆,李拂晓.GaAsFET大信号等效电路参数提取[J].固体电子学研究与进展,2005,25(4):464-468. 被引量:1
  • 3毕克允,李松法.宽禁带半导体器件的发展[J].中国电子科学研究院学报,2006,1(1):6-10. 被引量:23
  • 4陈婷,杨春涛,陈云梅,张国华.TRL校准方法原理及应用[J].计量技术,2007(7):46-50. 被引量:14
  • 5Behzad Razavi.模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2003.
  • 6尉理哲,刘章发,路宁.AB类功率放大器驱动电路的研究与设计[J].现代电子技术,2007,30(21):12-13. 被引量:3
  • 7GUSTAFS)N D, ANDERSSON C M, HELLBERG R, et al. A 44 dBm 1.0 - 3. 0 GHz GaN power amplifier with over 45 PAE at 6 dB back-off[C3. Microwave Symposium Digest ( IMS ), 2013 IEEE MTT-S International, IEEE, 2013: 1-4.
  • 8ARNOUS M T, BATHICH K, PREIS S, et al. 100 W efficient octave bandwidth GaN-HEMT power amplifierEC//2012 19th International Conference on Microwave Radar and Wireless Communications (MIKON), IEEE, 2012, 1:289 292.
  • 9ARNOUS M T, SAAD P, PREIS S, et al. Highly efficient and wideband harmonically tuned GaN- HEMT power amplifier[C]//2014 20th International Conference on Microwaves, Radar, and Wireless Communication (M1KON), IEEE, 2014: 1-4.
  • 10JARDEL O, OLIVIER M, LANCEREAU D, et al. A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for Radar applications [ C ]// Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, IEEE, 2012:639- 642.

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