摘要
通过特殊的MOCVD技术和器件工艺,应用超薄衬底和对正常衬底的减薄两种方法,成功地制作出了80 mm厚的超薄GaInP/GaInAs/Ge结构的太阳电池。对太阳电池进行了相关的测试,并对实验结果进行了分析和讨论。
Through MOCVD technology and devices process and utilizing two methods including ultra-thin substrate and substrate thinning, 80 μm ultra-thin GalnP/GalnAs/Ge structure solar cells were produced. Relevant test of solar cells were conducted and the experiment results were analyzed and discussed.
出处
《电源技术》
CAS
CSCD
北大核心
2014年第6期1069-1070,1142,共3页
Chinese Journal of Power Sources
