低温三步法制备柔性CIGS太阳电池

Flexible CIGS solar cells prepared by three-stage process at low temperature

以聚酰亚胺(PI)为衬底的柔性铜铟镓硒[Cu(In,Ga)Se2,简称CIGS]太阳电池因其极高的质量比功率受到广泛的关注与研究。采用低温"三步法"共蒸发工艺制备吸收层CIGS薄膜,在第二步时薄膜会经历富Cu的生长过程,并通过拉曼检测到CuxSe生成。通过X射线衍射光谱法(XRD)分析CIGS薄膜晶体结构,薄膜择优取向呈现为(220)/(204)晶向。扫描电子显微镜(SEM)分析发现CIGS薄膜颗粒大且致密。在PI衬底上制备的CIGS薄膜太阳电池的转换效率达到6.57%。

Flexible Cu （In,Ga）Se2（CIGS） solar cells based on polyimide substrate have attracted more attentions and researches because of its high specific power by weight. The CIGS thin films of absorption layer were deposited by using ＂three-stage process＂ co-evaporation at low temperature. The thin films would go through the Cu-rich growth process at the second stage, and CurSe was detected by Ramon spectrum. The crystal structure of the film was analyzed by XRD. The preferred orientation of CIGS films exhibits （220）/（204） crystal odentation It can be found that CIGS thin films form large and intensive grains through SEM analysis. The conversion efficiency of prepared CIGS thin film solar cells is up to 6.57% on PI substrate.