摘要
利用有源传输线模型与漂移-扩散模型的耦合计算模型,对在瞬态X射线辐照下电缆末端典型N+-p-n-N+结构的双极晶体管负载的毁伤效应与规律进行研究,通过分析双极晶体管内部晶格温度分布,判定是否处于毁伤状态,总结双极晶体管烧毁时间和烧毁所需能量与脉冲X射线脉冲宽度和注量之间的关系。结果表明:随着脉冲X射线脉宽增加,双极晶体管烧毁能量变化较小,烧毁时间逐渐增加;随着注量增加,烧毁时间逐渐降低,在5.86J/cm2以下时,烧毁所需能量基本相同,之后呈指数逐渐增加,并通过曲线拟合得到损伤规律的经验公式。
Using the transmission line and drift diffusion coupling model（TLM-DDM）,this paper analyzes the damage effect and mechanism of the silicon bipolar transistor induced by the cable under the X-ray pulse.The result shows that the damage effect can be decided by the lattice temperature of the bipolar transistor,and the burnout point appears first near the n-N^＋interface above the center of the collector region.The paper also describes the relationships of the damage energy and burnout time with the X-ray pulse width and fluence in the curve fitting.When the pulse width of the X-ray increases,the damage energy is almost unchanged and the burnout time increases gradually.The burnout time reduces as the X-ray fluence increases,and the damage energy increases after the X-ray fluence exceeds 5.86J/cm^2.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2014年第7期248-252,共5页
High Power Laser and Particle Beams
基金
装备预研基金项目
关键词
双极晶体管
毁伤效应
脉宽
注量
烧毁点
bipolar transistor
damage effect
pulse width
fluence
burnout point
