摘要
采用机械抛光和机械化学抛光的方法进行碲镉汞焦平面器件的碲锌镉衬底背面减薄,最后利用专用腐蚀液腐蚀的方法将碲锌镉衬底全部去除,碲镉汞完全露出;器件测试结果表明减薄后的MW1280×1024器件经受高低温循环冲击的可靠性显著提高。
Mechanical polish and chemical mechanical polish are used to back-thin the CdZnTe substrate of HgCdTe infrared focal plane arrays. The special etch liquid is applied to remove the remaining CdZnTe substrate,and the HgCdTe exposes totally. The experiment results indicate that the reliability of HgCdTe MW1280 ×1024 device after back-thinning is greatly improved.
出处
《激光与红外》
CAS
CSCD
北大核心
2014年第6期637-639,共3页
Laser & Infrared
