摘要
用加压 改进Bridgman法生长的大直径HgCdTe( =4 0mm)晶体 ,通过X射线形貌技术分析表明 ,晶体结构包含有大量的亚晶粒 ,同时在晶片中观察到夹杂、位错、应力区等结构缺陷。结合X射线双晶衍射回摆曲线分析表明 ,亚晶粒和测试晶面间的取向差约为 4 0″~ 2 0 0″ ,大小约为 0 .5mm× 0 .5mm~ 2mm× 2mm。
X rays topographs of the large diameter HgCdTe crystal were taken. The results show that various crystal defects such as sub grain, inclusion, dislocation, stress region have observed. The measurement of the full width at half maximum (FWHM) show that misorientation of sub grain between grain about 40″~200″ and the area about 0.5 mm×0.5 mm~2 mm×2 mm.
出处
《红外技术》
CSCD
北大核心
2001年第2期4-7,共4页
Infrared Technology
关键词
大直径HgCdTe
结构缺陷
形貌像
回摆曲线
X射线
红外
large diameter HgCdTe
structure defect
X rays topographs
the full width at half maximum (FWHM)