碲镉汞光化学氧化钝化及机理分析

Study of Photochemical Oxidation of n type Mercury Cadmium Tellurium Photoconductance Detectors

采用光化学氧化钝化方法 ,首次实现了对n型碲镉汞光电导探测器的表面钝化 ;利用XPS分析了不同光化学氧化条件对氧化的影响及氧化物的构成 ,探讨了光化学氧化钝化的机理 ,并对光化学氧化钝化和阳极氧化的两类探测器性能进行了比较。

Instead of anodized oxidation, photochemical oxidation is used to perform the surface passivation for n type mercury cadmium tellurium photoconductance detectors for the first time. X ray photoelectron spectrum(XPS) is used to analyze the influence of the oxidation condition on the oxidation layers, as well as the formation of the oxidation layers. The passivation mechanism of photochemical oxidation is also studied. From the comparison of the two kinds detectors performance, which were prepared following to the same technique condition except the passivation ways, one the anodized oxidation, the other the photochemical oxidation, the results of photochemical oxidation is superior to that of anodized oxidation are obtained.