期刊文献+

Crystallographic Parameters and Band Gap of CdSxSe1-x Mixed Crystals

Crystallographic Parameters and Band Gap of CdSxSe1-x Mixed Crystals
下载PDF
导出
摘要 Crystals of CdSxSe1-x alloys have been grown from the vapour phase. Some of the physical properties, such as lattice parameters, crystal structure and x-rays data of CdSxSe1-x alloys were determined using x-ray diffractometry. X-ray diffractometry has shown that CdS-CdSe mixed crystals had the wurtzite structure for all compositions between CdS and CdSe. The lattice parameters (both a and c) were found to show a linear dependence with composition. The dependence of the lattice parameters of a and c on composition can be expressed as: a(x) = 4.165 + 0.16x; c(x) = 6.713 + 0.27x. The variation of band gap with composition was determined for these samples from optical absorption measurements, which showed that the band gap varied smoothly and monotonically, but not linearly over the composition range typical results were found between 2.42-1.74 eV at room temperature.
机构地区 Physics Department
出处 《Journal of Energy and Power Engineering》 2014年第4期770-774,共5页 能源与动力工程(美国大卫英文)
关键词 Thin films mixed crystals lattice parameter SEMICONDUCTORS devices. 混合晶体 晶体学参数 带隙 X-射线衍射法 晶格参数 CdSe 线性关系 纤锌矿结构
  • 相关文献

参考文献27

  • 1A.A. Al-Bassam, Deep levels on Zinc Cadmium Selenide Alloys, J. College Sci. King Saud Univ. 5 (2) (1993) 149-159.
  • 2A.A. AI-Bassam, A.W. Brinkman, G.J. Russell, I. Woods, Electrical properties ofZnxCd1-xSe (x < 0.45)/I, J. Crystal Growth 86 (1988) 667-672.
  • 3A.A.I. A1-Bassam, Schottky barriers on Zinc Cadmium Selenide alloys (Zn, Cd1-xSe) with x = 0.85 and x = 0.93, Arabian I. Sci. Eng. 15 (1990) 367-372.
  • 4B. Ray, II--VT Compounds, Pergamon, Oxford, 1969, pp. 1-100.
  • 5A.A.I. Al-Bassam, Growths and properties of (ZnCd)Se Single Crystals, Arabian J.S Ci. Eng. 15 (1990) 397-402.
  • 6A.I. AI- Bassam, A.M. Dhafi, Crystallographic and Optical absorption characterization of CdSxSe1-x alloys for Ox1/1, Journal of Crystal Growth 134 (1993) 63-66.
  • 7G.R. Olbright, N. Peyghambarian, Widegap II-VI Compounds for Optoelec Tronics Applications, Applied Physics Letters 48 (1986) 18.
  • 8N. 1. Vitrikhovskii, B. Mizetskaya, Structural and electrical properties of cadmium-Sulpho-selenicle sulid solutions, Soviet Phys.-Solid State 1 (1959) 3581-3585.
  • 9A.A.I. A1- Bassam, A.A. AAL-Juffali, A.M. AI- Dhafiri, Structure and Lattice parameters of cadmium sulphide selenide (CdSx SeI-X) mixed crystals, J. of Crystal Growth 135 (1994) 476-480.
  • 10R.S. Feigelson, A.N. Diaye, S. Yin, R.H. Bube, Electrodepostion of Zinc Cadmium sulphide thin film form, J. Appl. Phys. 48 (1977) 3162-3169.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部