摘要
报导了经电子辐照后的高阻 (4 5~ 70Ω·cm)NTD FZ Si p+nn+结的N Si中缺陷态在氮气保护下的等时、等温退火特性 ,而且获得了主要缺陷态能极E3、E4 的激活能和频率因子。
The isochronous and isothermal annealing characteristics of the defect states in the N Si with high resisstivity (45~70Ω·cm) NTD FZ Si p +nn + junction after electron irradiation under protection of nitrogen are reported and frequency factor of the main defect state levels E 3 and E 4 are obtained.
出处
《电力电子技术》
CSCD
北大核心
2001年第1期50-52,共3页
Power Electronics
基金
南省教委自然科学基金