摘要
概括介绍了铁电薄膜的发展过程，分析了不同制备方法的优缺点，指出了在制备中需要考虑的主婴问题，给出了铁电薄膜基本参数、物化结构性能、物理性质等的表征方法，讨论了铁电薄膜在热释电探测、光开关、随机存取存储器等方面的应用，最后简单介绍了我国有关单位铁电薄膜的研究情况．
A general introduction to the history of development of ferroelectric thin films is given in this paper. We also discuss the advantage and disadvantage of different processing methods, the main problems 10 be considered in film preparation, the characterization of the films' basic parameters, and the applications of such films in pyroelectric sensors' optical switches, FRAM, etc. Finally the present status of researches in some institutions in China is related.
出处
《物理》
CAS
北大核心
1992年第11期671-678,共8页
Physics
