初道屏蔽效应对低能电子碰撞H(e,2e)反应的影响

Influence of the Screeing Effect of Initial Channel on the H(e,2e) Reaction of Low Energy Electron Impact

考虑初道屏蔽效应,研究了低能电子碰撞H(e,2e)的反应过程.计算了共面非对称几何条件下能量为27.2 eV的入射电子碰撞H(e,2e)反应的三重微分截面(TDCS),将其计算结果与3C、DS3C和CDS3C模型所得结果及实验数据进行了比较,结果表明CDS3C模型能对上述碰撞过程成功描述,改善了与实验结果的符合程度.

Considering that the screeing effect of initial channel,the process of the H（e,2e） reaction of low energy electron impact was studied.The triple differential cross sections of the collision reaction of incident electron at 27.2 eV were calculated under the coplanar as mmetrc geometry.Further,the calculation results were compared with the results of 3C,DC3C and CDS3C models and experimental data.The result showed that the above collision process was successfully described,and the coincidence degree with experimental data was improved by CDS3C model.