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CdS多晶薄膜的制备及其性能

Preparation and Properties of CdS Polycrystalline Thin Films
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摘要 采用化学水浴法(CBD)及85—65℃的高低温工艺模式,在醋酸镉体系中制备大面积硫化镉CdS多晶薄膜,经X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)和紫外-可见分光光度计(UV-VIS)等测试表征CdS多晶薄膜结构、形貌及光学性质。结果表明:CdS在85℃条件下快速成核,再逐渐降温至65℃慢速生长,可使大面积CdS多晶薄膜的粒径较大(约60nm)、均匀性较好、致密度较高。通过优化85℃到65℃的高低温生长工艺,降温速率为2%/min的条件下制备出厚度约50nm的超薄CdS多晶薄膜,经氮气气氛400oC退火处理后,CdS晶粒长大,透过率降低,禁带宽度变窄。 The polycrystalline CdS thin films were deposited with a chemical bath method (CBD) by gradually lowering the solu- tion temperature from 85 ℃ to 65 ℃ in a cadmium acetate system. The structure, morphology and optical properties of the CdS thin films were tested through XRD, FESEM, UV-VIS. The experiments demonstrated that CdS film experiencs a fast nucleation stage at 85 ℃ and then grows slowly with temperature gradually reducing to 65 ℃ ,which makes the CdS film has large grain size ( about 60 nm) , good uniformity and high density. By optimizing the growth process from high temperature ( 85 ℃ ) to low temperature ( 65 ℃ ) , ultrathin CdS polycrystalline films of 50 nm are obtained at the cooling rate of 2 ℃/min. After annealing at 400 ℃ in N2 atmosphere, the grains of CdS grow up, its transmittance decreases and its band gap narrows.
出处 《济南大学学报(自然科学版)》 CAS 北大核心 2014年第5期382-385,共4页 Journal of University of Jinan(Science and Technology)
基金 山东省自然科学基金(ZR2010EZ003)
关键词 化学水浴法 高低温模式 CDS薄膜 CdTe太阳能电池 chemical bath deposition high to low temperature mode CdS thin film CdTe solar cell
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参考文献14

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