SrBi_2Ta_2O_9/LaNiO_3异质结薄膜的铁电、磁性能及漏电流研究

Ferroelectric,Magnetic Properties and Leakage Currents of SrBi_2Ta_2O_9/LaNiO_3 Heterostructure Thin Films

采用溶胶凝胶方法在Si(100)衬底上生长了SrBi2Ta2O9/LaNiO3(SBT/LNO)异质结薄膜,其中SrBi2Ta2O9薄膜呈高度(115)取向.测量了不同退火温度下异质结的电滞回线和漏电流密度,结果表明,700℃下退火的薄膜剩余极化值最高,漏电流最低,且表现出弱的室温铁磁行为.漏电流机理分析表明薄膜界面为欧姆接触.

SrBi2Ta2O9 （SBT）/LaNiO3 （LNO） heterostructure thin films were grown on Si （100） substrate by using a sol-gel process.XRD results reveal high （115） orientation of SrBi2Ta2O9 thin film.The hysteresis loops and leakage current density of the films annealed at different temperatures were measured.The film annealed at 700 ℃ showes the lowest leakage current density and a well saturated P-E hysteresis loop with the largest remnant polarization （Pr） of 7.16 uC/cm2.Leakage mechanism analysis suggests an Ohmic conduction.In addition,the SBT/LNO heterostructures annealed at 700 ℃ exhibit a weak roomtemperature ferromagnetic behavior.