摘要
Ⅲ-Ⅴ族半导体纳米线材料被认为是高速光电探测器最有前途的材料之一。采用金属有机化学气相沉积法在GaAs(111)B衬底上生长芯-壳结构/GaAs-AlGaAs纳米线材料,GaAs芯材料的生长机制为气相-液相-固相,而AlGaAs壳材料的生长机制为气相-固相。采用场发射扫描电子显微镜和微区光荧光谱仪等测试分析手段研究了AlGaAs壳材料横向、轴向和生长方向的均匀性,探讨了生长机制对均匀性的影响。在此基础上获得了组分均匀的高晶体质量的AlGaAs壳材料,其Al组分为0.14。
Ⅲ-Ⅴ compound semiconductor nanowires （NWs） are one of the most promising materials for high- speed photodetector. The core-shell/GaAs-A1GaAs nanowires were grown on GaAs （111）B substrates by metal or- ganic chemical vapor deposition （MOCVD）. The GaAs core was grown by vapor-liquid-solid （VLS） mechanism, whereas the flowing AlGaAs shell was grown by vapor-solid （VS） mechanism. The uniformity of the A1GaAs shells were investigated by field emission-scanning electron microscopy （FE-SEM） and micro-photoluminescence （micro- PL）. Meanwhile the growth mechanism of the AlGaAs shell was studied. The high quality AlGaAs shell material was obtained. The Al molar in the AlGaAs shell is 0. 14. Additionally, the Al molar in the A1GaAs shell is very uniform.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2014年第12期34-37,共4页
Materials Reports
基金
国家自然科学基金(11372197)
