光对ZnO薄膜电致电阻转变效应的调控研究

Effect of Illumination on Electric Field Induced Resistive Switching of ZnO film: Study

利用磁控溅射技术在镀铂硅片上制备ZnO薄膜,X射线衍射测试表明ZnO薄膜为纯相结构,原子力显微镜测试显示ZnO薄膜表面平整均匀,均方根粗糙度为1.87nm.在室温下对Au/ZnO/Pt三明治结构的电输运行为进行了研究,结果表明同时存在电致电阻转变效应和光伏效应,并且光照可调控电致电阻.当光强为360μW·cm-2时,电阻调控幅度达78%,这种光调控的电致电阻转变有助于实现多态存储,提高存储密度.

ZnO film is prepared on Pt/Ti/SiO2/Si substrate by magnetron sputtering. The X-ray diffraction and atomic force microscope are employed to characterize its structure and surface morphology, respectively. The result shows that the ZnO film has a pure phase and a smooth surface with a root-mean-square roughness of 1.87 nm. At room temperature, the electrical transport property of the Au/ZnO/Pt structure is investigated. It further shows that the photovoltaic effect and the electric field induce the resistive switching effect co-existing in the sample. Furthermore, the electric field induced resistance can be tuned by varying illumination, and the resistive adjustability can reach as high as 78% when the illumination with 360 μW·cm-2 is applied. The photo-tuned resistive switching contributes to both the favored multi-resistance state storage and the storage density.