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磁场在晶体生长中的应用 被引量:5

Review on Magnetic Field Applied in Crystal Growth
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摘要 针对磁场在晶体生长中的应用,综述了近年来该领域数值模拟和实验研究的进展,包括静态磁场和动态磁场的产生原理及其在晶体生长中的效应。分析了晶体生长过程中存在的主要流动。综述了晶体生长过程中磁场力对导电熔体对流、固液界面形貌和杂质分布的影响,重点分析了磁场在直拉法单晶硅和定向凝固法多晶硅生长过程中的应用,总结了该领域当前存在的问题及其发展趋势。 Based on the current studies mainly involved in the principle of a static magnetic field and a non-static magnetic field and the effects of a magnetic field in crystal growth, the development of the researches on the numerical study and experimental results on the magnetic field applications is reviewed. In crystal growth, the main flow in the melt is analyzed, the effects of force induced by a magnetic field on melt flow, growth interface shape and solute distri- bution of the conducting melt are discussed. The magnetic field applied in Czochralski mono-silicon and directional so- lidification multicrystalline silicon crystal growth is analyzed particularly. The existing problem nowadays and the de- velopment trends in this field are pointed out.
出处 《材料导报》 EI CAS CSCD 北大核心 2014年第13期72-77,共6页 Materials Reports
基金 国家自然科学基金青年基金(51206069) 高等学校博士学科点专项科研基金(20123227120017) 江苏省自然科学青年基金(BK2012295) 江苏大学高级专业人才启动基金(1281130015)
关键词 静态磁场 动态磁场 晶体生长 熔体对流 单晶硅 多晶硅 static magnetic field, non-static magnetic field, crystal growth, melt flow, mono-silicon, multicrystalline silicon
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参考文献36

  • 1Dhanaraj G,Byrappa K,et al.Handbook of crystal growth[M].Berlin:Springer-Verlag,2010:1215.
  • 2Lan C W.Recent progress of crystal growth modeling and growth control[J].Chem Eng Sci,2004,59(7):1437.
  • 3Rosenberger F.Fundamentals of crystal growth I[M].Berlin:Springer-Verlag,1979:366.
  • 4Kakimoto K.Flow instability during crystal growth form the melt[J].Prog Cryst Growth Charact,1995,30(2-3):191.
  • 5Brown R A.Theory of transport processes in single crystal growth from the melt[J].Am Inst Chem Eng,1988,34(1):881.
  • 6Teng Y Y,Chen C J,et al.The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process[J].J Cryst Growth,2010,312(7-8):1282.
  • 7闵乃本.晶体生长的物理基础[M].上海:上海科学技术出版社,1986.
  • 8Morton J L,et al.Magnetic field effects during liquid-encapsulated Czochralski growth of doped photonic semiconductor crystals[J].J Cryst Growth,2003,250(1-2):174.
  • 9Walker J S,Henry D,BenHadid H.Magnetic stabilization of buoyant convection in the liquid-encapsulated Czochralski process[J].J Cryst Growth,2002,243(1-2):108.
  • 10Muiznieks A,Krauze A,Nacke B.Convective phenomena in large melts including magnetic fields[J].J Cryst Growth,2007,303(1):211.

二级参考文献15

  • 1李友荣,余长军,吴双应,彭岚.轴向磁场对硅单晶Czochralski生长过程的影响[J].材料研究学报,2005,19(3):249-254. 被引量:8
  • 2郑敏.Helmholtz线圈的磁场分布及应用[J].青海大学学报(自然科学版),2005,23(5):63-64. 被引量:3
  • 3NAKANO S, Chen X J, Gao B, et al. Numerical analysis of cooling rate dependence on dislocation density in multicrystalline Silicon fbr solar cells [J]. Journal of Crystal Growth,2011,318(1):280-282.
  • 4CHEDZEY H A, HURLED J. Avoidance of growth-striae in semiconductor and metal crystals grown by zone-melting tech- niques[J]. Nature, 1966,210:933-934.
  • 5DOLD P, CROLL A, BENZ K W. Floating-zone growth of Sili-con in magnetic fields. 1. Weak static axial fields[J]. Journal of Crystal Growth, 1998,183(4) : 545-553.
  • 6STELIAN C, DELANNOY Y, YVES F, et al. Solute segregation in directional solidification of GalnSb concentrated alloys under alternating magnetic fields [J ]. Journal of Crystal Growth, 2004, 266(1/3) :207-215.
  • 7魏东海.勾形磁场对硅单晶CZ生长过程影响的全局数值分析[D].重庆:重庆大学,2009.
  • 8张厥宗.硅片加丁技术[M].北京:化学工业出版社,2009.
  • 9陈围红,王滋渊,肖益波,等.多品硅锭定向凝同过程的数值模拟[J].电子工业专用没备,2009(6):40-43,46.
  • 10KULIEV A T, DURNEV N V, KALAEV V V. Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for Silicon solar cells[J]. Journal of Crystal Growth, 2007, 303(1): 236-240.

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