SnO_2/Fe_2O_3复合膜界面电导率特性分析

Analysis of conductance property of interfaces transition layer for Sn O_2 /Fe_2 O_3multilayer films

等离子体化学气相淀积法 (PCVD法 )制备的复合膜 Sn O2 /Fe2 O3界面电导特性是由于非平衡反应生成的过渡层的结果 .其电导机理可用半导体薄膜理论来阐明 :当锡在 Fe2 O3中的浓度低时 ,由于准自由电子补偿机制起作用 ,导电率升高 ;当锡与铁在过渡层中浓度接近时 ,杂质散射和晶界电阻增大 。

The conductance property of Sn O2 /Fe2 O3mutilayer thin films prepared by PVCD is different from the monolayer Sn O2 thin films.The experimental result of the conductance property as a function of the Sn O2 thin film on the thin film of Fe2 O3can be interpreted by the theory of amorphous semiconductors.The semiconducting behaviors of bilayer thin films are related to the concentration of Sn O2 .Atlow Sn O2 concentration, n- type donor is the main semiconducting mechanism of the electrical conductivity.At high Sn O2 concentration,the electrical risitivity is increased owing to reflection of donor and grain interfaces risitivity.