硅基纳米金属光刻蚀结构的侧向光伏效应

THE STUDY OF LATERAL PHOTOVOLATIC EFFECT IN SILICON-BASED PHOTOETCHING NANO-METAL STRUCTURE

研究目的是探索半导体异质结构下的新型光电效应,为位置灵敏传感器的设计提供新思路.利用磁控溅射镀膜技术在P型硅基衬底上生长N型Cr金属薄膜,从而得到Cr/SiO/Si的硅基纳米金属异质结构.使用纳米光刻蚀技术在金属层上按照设计的条纹图形进行光刻蚀加工,得到硅基纳米金属光刻蚀结构.在对结构进行I-V特性测量的过程中发现侧向光伏效应.使用635nm,功率5mW激光器时,其侧向光伏效应的最大灵敏度为4.844mV·mm-1,并且线性度较好.

The purpose of this study is to explore new photoelectric effect under semiconductor heterostructures,and use the structure to design new position-sensitive sensor.Magnetron sputtering technique was used to grow N-type metal film （Cr）on the P-type Silicon substrate,in order to get a silicon-based nano-metal structure,consisting of Cr/SiO/Si.Silicon-based photoetching nano-metal structure was obtianed by using photolithography on the metal layer according to the design of the optical mask.During the measurement of I-V characteristic of the structure we discovered lateral photovoltaic effect in the structure.When using 6 3 5 nm,5 mW laser power,the maximum sensitivity of its lateral photovoltaic effect was 4.844 mv·mm^-1 ,and I-V effet have good linearity at the same time.