gGaS_2单晶生长与完整性研究

Study on Crystal Growth and Integrality of AgGaS_2

采用二温区气相输运温度振荡方法合成了高纯单相致密的AgGaS2 多晶 ,计算出晶格常数a=5.7535nm ,c =10 .30 0 8nm ,以及S原子位置x =0 .2 79,与PDF值相差很小 ,表明其是高质量的多晶原料。以此为原料用改进Bridgman法生长出直径 15mm长度 30mm的单晶体 ,经外形观测、解理试验和X射线衍射分析表明其是结晶完整的单晶体。

High pure AgGaS 2 polycrystal of single phase and high density has been synthesized by two zone vapor transporting and temperature oscillating method.The lattice constant and the location of S atom were calculated to be a =5.753nm, c =10.3008nm and x =0.279,with little discrepancy comparing to PDF value,which showed the high quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.