掺铅CsI晶体中Pb^(2+)聚集体的发光(英文)

Luminescence of Pb^(2+)-based aggregates in Pb-doped CsI crystals

退火处理后的 CsI:Pb晶体在 10～ 30K温度范围内观察到两类发光 :当激发波长为 410nm, 主要发光带在 464nm附近 ;而当激发波长为 360nm或 300nm,主发射带为 422nm。这两种发光带 的相对强度与退火时间的长短密切相关。讨论了 CsI:Pb晶体中不同的 Pb2＋基聚集相的形成机制 和发光机理。

Two luminescence phases were observed in annealed CsI:Pb crystals at the 10～ 30K tem-perature range, which are dominant emission round 464 nm with the excitation at 410 nm and domi-nant emission round 422 nm with the excitation about 360 nm and 300 nm, respectively. It was found that their relative intensities depend strongly on the annealing time and the origin of the emission bands and the formation mechanism of different Pb2＋-based aggregates is discussed.