摘要
采用离子束增强沉积的方法,改变氧分压,在硅基体表面制备出了不同组分及不同取向的 氧化钛薄膜。采用 XRD,掠角衍射以及 XPS分析方法对薄膜的成分、结构和取向进行了分析,并 通过 RBS分析计算出了薄膜的 O/Ti比。实验结果发现,所制备的氧化钛薄膜为具有一定择优取 向的多晶膜,薄膜内 TiO、 Ti2O3和 TiO2共同存在。当氧分压低于 8.4× 10-4 Pa时,氧化钛薄膜的 成分以 TiO为主,且 TiO的取向随氧分压的增加从( 220)向( 031)转变,氧分压对薄膜取向的影响 较大。当氧分压高于 8.6× 10-4 Pa时,氧化钛薄膜的成分以具有( 100)择优取向的金红石型 TiO2 为主,含有少量其他结构的 TiO2和低价 Ti,其成分及取向相对较为稳定,对氧分压的变化不敏感。
A series of titanium oxide thin films have been synthesized on silicon wafers by ion beam en- hance deposition at different O2 pressure. X-ray Photo-electron Spectroscopy, X-ray diffraction (XRD), glancing angle diffraction and Rutherford backscattering spectroscopy(RBS) were used to analyse the composition, structure and orientation of the film. It was found that: 1) The film is polycrystal-line with Ti2+ , Ti3+ , Ti4+ coexist. 2) When O2 pressure is lower than 8.4× 10-4 Pa, the main composition of the film is TiO that preferred orientation changed from (220) to (031) with the increase of O2 pressure. 3) When the O2 pressure is above 8.6× 10-4 Pa, rutile TiO2 with a preferred orientation of (100) is foundto be the major composition of the film.
出处
《功能材料与器件学报》
CAS
CSCD
2001年第1期54-58,共5页
Journal of Functional Materials and Devices
关键词
氧化钛
离子束增强沉积
氧分压
薄膜
合成
Titanium oxide
Ion beam enhanced deposition
Oxygen pressure