用于GaSb/AlGaAsSb器件制备的新型化学腐蚀液研究

Study of a new etchant for GaSb/AlGaAsSb device fabrication

提出了一种适用于 GaSb/AlGaAsSb器件工艺的由氢氟酸、酒石酸和双氧水构成的氢氟酸 系腐蚀液。该腐蚀液对于 GaSb和 AlGaAsSb材料具有良好的腐蚀特性和稳定的刻蚀速率。选用 合适的溶液组份可以得到较低的刻蚀速率，有利于在器件工艺中进行精确控制。实验中发现该腐 蚀液对 AlGaAsSb的腐蚀速率与其 Al组份呈抛物线关系，在合适的 Al组份下可对 AlGaAsSb和 GaSb两种材料进行非选择性的刻蚀。

A new etchant consists of hydrofluoric acid, peroxide and tartaric acid for the chemical etch- ing of GaSb/AlGaAsSb materials has been studied. Results show that this etchant has a stable etching rate to both GaSb and AlGaAsSb compound materials; under suitable solution composition quite low etching rate could be obtained, which are useful for the fabrication of GaSb/AlGaAsSb devices. Para- bolic relation between the etching rate of AlGaAsSb materials and their Al content was found, un- selective etching could be performed for GaSb and AlGaAsSb material with certain Al content.