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考虑到纵向掺杂分布影响的SOI功率器件完全耐压模型

Full Breakdown Model of SOI Power Component Impacted by Vertical Doping Profile
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摘要 首先将任意纵向掺杂的漂移区等效为均匀掺杂的漂移区,然后基于二维泊松方程获得了SOI功率器件在全耗尽和不全耗尽情况下表面电场和击穿电压的完整解析表达式。借助此模型对漂移区纵向均匀掺杂、高斯掺杂、线性掺杂和二阶掺杂SOI二极管的表面场势分布和击穿电压进行了研究,解析结果和仿真结果吻合较好,验证了模型的准确性。最后在满足最优表面电场和完全耗尽条件下,得到器件优化的广义RESURF判据。 Accordingo to the concept of effective concentration,the arbitrary vertical doped drift region is equivalent to a uniform doped drift region.Then,using 2D Poisson equation,the complete analytical expressions for the surface field distributions and breakdown voltages are derived for the SOI power device in the scenarios of completely and partially depleting.Based on the model the surface field distributions and the breakdown voltages of SOI diode in the drift region are studied with longitudinal uniform,Gaussian,linear,and two-step dopings profiles.Simulation results are in agreement with analytical results match well,thus proving the correct of the proposed model.Finally,under the condition of optimal surface electric field and depleting completely,the general RESURF criterion is yielded for the optimization of the arbitrary drift doping profiles.
作者 花婷婷 郭宇锋 于映
机构地区 南京邮电大学电子科学与工程学院
出处 《南京邮电大学学报（自然科学版）》 北大核心 2014年第3期85-89,共5页 Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition
基金 国家自然科学基金(61076073) 教育部博士点基金(20133223110003) 江苏省普通高校研究生科研创新计划(CXZZ11_0382)资助项目
关键词 绝缘体上硅 功率器件 击穿电压 模型 SOI power component breakdown voltage model
分类号 TN386 [电子电信—物理电子学]
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参考文献12

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二级参考文献19

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南京邮电大学学报（自然科学版）
2014年 第3期

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